Sensors

Maintaining etch uniformity from the center to the edge of the wafer during the etching process is a critical challenge. In particular, the edge of the wafer poses difficulties due to changes in the angle of ion incidence caused by the curvature of the sheath, making it challenging to achieve the desired etch pattern. Therefore, identifying and monitoring key factors that significantly impact center-to-edge uniformity is essential.

As semiconductor devices have become increasingly miniaturized, the ability to control very small Critical Dimensions (CDs) during the etching process has become crucial through controlled plasma processes. Consequently, diagnosing plasma and reflecting this in the process to enhance yield is of paramount importance. Typically, an invasive sensor like a Single Langmuir Probe (SLP) is utilized for plasma diagnostics. However, using this sensor can affect the plasma, necessitating the use of non-invasive diagnostic methods.

RLED contains 80,400 images and corresponding events, we utilized a photometer to continuously measure scene illumination and calculate the illumination value after attenuation at the event camera. The capture scenes included city (35.0%), suburbs (10.3%), town (14.5%), village (17.8%), and valley (22.4%). Half of the RLED frames are captured at a frame rate of 25 fps, and the other half at 10 fps. The exposure time is set to 1ms, 3ms, and 5ms based on the varying environmental illumination.

I would introduce the data we uploaded as follows: These data are the experimental fringe images taken by the experimental platform we built. These phase-shifting fringe images are divided into the fringe images required for calibration and the fringe images for measuring the target to be measured. The required images for calibration are the fringe images taken at different heights (different heights are: 15mm, 25mm, 30mm and 40mm).