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The reliability of In-Si-O (ISO) thin-film transistors (TFT) to bias voltage-stress and photo-stress is studied. The ISO TFTs were developed with a fully photolithographic process, with a maximum temperature of 200 C. The TFTs typically showed a mobility of 5.03 cm$^2$/Vs, a threshold voltage, $V_{th}$, of -0.16 V and a subthreshold swing of 312 mV/dec. The TFTs were biased for up to four hours at different temperatures and illumination. Threshold voltage shifts were observed and modeled.

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  • Reliability
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    when iter time =50 ,we  can obtain this picture

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    Overview as coins used as measure of size.

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  • Other
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    Datasets contain survey data of 873 rural poor households in the states of Maharashtra, Odisha, Madhya Pradesh, and Rajasthan.

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  • Power and Energy
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    Fri, 01/25/2019 - 05:22