Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''

Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''

Citation Author(s):
Guangyu
Yao
Submitted by:
Sanjiv Sambandan
Last updated:
Sat, 06/15/2019 - 14:29
DOI:
10.21227/0cbc-5b56
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Abstract: 

The reliability of In-Si-O (ISO) thin-film transistors (TFT) to bias voltage-stress and photo-stress is studied. The ISO TFTs were developed with a fully photolithographic process, with a maximum temperature of 200 C. The TFTs typically showed a mobility of 5.03 cm$^2$/Vs, a threshold voltage, $V_{th}$, of -0.16 V and a subthreshold swing of 312 mV/dec. The TFTs were biased for up to four hours at different temperatures and illumination. Threshold voltage shifts were observed and modeled. Threshold voltage shifted towards the negative, and off-current and subthreshold swings increased when the TFT was exposed to light with wavelengths less than 660 nm. Further investigation indicated that these phenomena were caused by persistent photo-conductivity. This shift could be compensated for by using a positive gate pulse to remove the light-induced shallow doubly-ionized donor states.

Instructions: 

The zip files contains the data sets for four figures: Fig 1, Fig 3, Fig. 4 and Fig. 5 of the paper

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[1] Guangyu Yao, "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''", IEEE Dataport, 2019. [Online]. Available: http://dx.doi.org/10.21227/0cbc-5b56. Accessed: May. 30, 2020.
@data{0cbc-5b56-19,
doi = {10.21227/0cbc-5b56},
url = {http://dx.doi.org/10.21227/0cbc-5b56},
author = {Guangyu Yao },
publisher = {IEEE Dataport},
title = {Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''},
year = {2019} }
TY - DATA
T1 - Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''
AU - Guangyu Yao
PY - 2019
PB - IEEE Dataport
UR - 10.21227/0cbc-5b56
ER -
Guangyu Yao. (2019). Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''. IEEE Dataport. http://dx.doi.org/10.21227/0cbc-5b56
Guangyu Yao, 2019. Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''. Available at: http://dx.doi.org/10.21227/0cbc-5b56.
Guangyu Yao. (2019). "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''." Web.
1. Guangyu Yao. Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors'' [Internet]. IEEE Dataport; 2019. Available from : http://dx.doi.org/10.21227/0cbc-5b56
Guangyu Yao. "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''." doi: 10.21227/0cbc-5b56