Cryogenic Long Channel Bulk CMOS Dataset for Cryogenic CMOS Modeling

Citation Author(s):
Hao
Su
Southern University of Science and Technology
Yiyuan
Cai
Southern University of Science and Technology
Shenghua
Zhou
Southern University of Science and Technology
Kai
Chen
Southern University of Science and Technology
Submitted by:
Hao Su
Last updated:
Mon, 07/08/2024 - 15:58
DOI:
10.21227/0fb6-2034
Data Format:
License:
22 Views
Categories:
Keywords:
0
0 ratings - Please login to submit your rating.

Abstract 

This dataset contains cryogenic Id-Vd and Id-Vg data for N- and P-MOSFET (W/L = 10 μm/1μm) from 300 K to 4 K. These data contain the I-V data corresponding to different Vds, including the data of linear region and saturation region. A Keysight B1500A semiconductor analyzer attached to a pulse tube refrigerator was used to measure these data. The transconductance, threshold voltage, subthreshold swing, and other parameters of Cryo-CMOS can be obtained by processing these data. 

In addition, because it is difficult to obtain cryogenic data, these data are of great significance for device modeling and circuit design at cryogenic temperatures.

Instructions: 

The dataset includes "NMOS_10_1" and "NMOS_10_1" folders. Each folder contains an "Id_Vg_Vd=0.1V (-0.1V)" table for Id-Vg data and an "Id_Vd_N_10_1_ (Id_Vd_P_10_1_)" folder for Id-Vd data from 4 K to 300 K.

Comments

hello there

Submitted by mohammad haseli on Sat, 09/28/2024 - 06:24