Extracted Experimental Data of LDMOS Transistors
- Citation Author(s):
-
Ali Houadef
(IGEE)
- Submitted by:
- Ali Houadef
- Last updated:
- DOI:
- 10.21227/eva3-ws91
- Data Format:
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Abstract
We collected BV , RON;SP from over 80 publications reported since the year 2000 and classified them according to their - main- topology and process type.
Instructions:
The excel sheet contains reported breakdown voltage, on-state resistance, and figure of merit of peer reviwed LDMOS devices that are based on experimental data only.
the data is used in the review article : A Review of LDMOS Topologies.
