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Gate-Level RTL Description of the Glitch Optimized Multipliers
- Citation Author(s):
- Submitted by:
- Anuradha Ranasinghe
- Last updated:
- Tue, 05/17/2022 - 22:17
- DOI:
- 10.21227/aeqk-7j60
- Data Format:
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Abstract
This paper presents a novel implementation scheme
of the essential circuit blocks for high performance, full-precision
Booth multipliers leveraging a hybrid logic style. By exploiting
the behavior of parasitic capacitance of MOSFETs, a carefully
engineered design style is employed to reduce dynamic power dissipation
while improving the glitch immunity of the circuit blocks.
The circuit-level techniques along with the proposed signal-flow
optimization scheme prevent the generation and propagation
of spurious activities in both partial-product and adder-tree
stages. Two full-precision Booth multipliers built from proposed
strategies were compared to the state-of-the-art versions known
from literature by means of extensive post-layout simulations
in 65-nm CMOS technology. The proposed versions on average
demonstrated up to 10% and 30% power savings in general.
The front-end Verilog RTL description of the Glitch-Optimized multipliers are available in this dataset. These RTL files can be used for spice level, gate level or post layout level simulations.
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