The reliability of In-Si-O (ISO) thin-film transistors (TFT) to bias voltage-stress and photo-stress is studied. The ISO TFTs were developed with a fully photolithographic process, with a maximum temperature of 200 C. The TFTs typically showed a mobility of 5.03 cm$^2$/Vs, a threshold voltage, $V_{th}$, of -0.16 V and a subthreshold swing of 312 mV/dec. The TFTs were biased for up to four hours at different temperatures and illumination. Threshold voltage shifts were observed and modeled.

DOI Link: 
10.21227/0cbc-5b56
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[1] Guangyu Yao, "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''", IEEE Dataport, 2019. [Online]. Available: http://dx.doi.org/10.21227/0cbc-5b56. Accessed: Mar. 20, 2025.
@data{0cbc-5b56-19,
doi = {10.21227/0cbc-5b56},
url = {http://dx.doi.org/10.21227/0cbc-5b56},
author = {Guangyu Yao },
publisher = {IEEE Dataport},
title = {Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''},
year = {2019} }
TY - DATA
T1 - Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''
AU - Guangyu Yao
PY - 2019
PB - IEEE Dataport
UR - 10.21227/0cbc-5b56
ER -
Guangyu Yao. (2019). Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''. IEEE Dataport. http://dx.doi.org/10.21227/0cbc-5b56
Guangyu Yao, 2019. Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''. Available at: http://dx.doi.org/10.21227/0cbc-5b56.
Guangyu Yao. (2019). "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''." Web.
1. Guangyu Yao. Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors'' [Internet]. IEEE Dataport; 2019. Available from : http://dx.doi.org/10.21227/0cbc-5b56
Guangyu Yao. "Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''." doi: 10.21227/0cbc-5b56