photodetectors
This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high responsivity Rs
(A/W) and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %, at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias).
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Self-powered photodetectors which can operate without external power sources hold immense promise in future photodetection systems owing to their zero-power features. To achieve high-performance self-powered optoelectronic devices, efficient separation of electron-hole pairs to generate sufficiently high photocurrents is critical, especially in the case of 2D and 3D hybrid devices.
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