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High performance self-powered photodetectors based on graphene nanoribbons/Al2O3/InGaZnO heterojunctions
- Citation Author(s):
- Submitted by:
- Xiaoling Ye
- Last updated:
- Wed, 01/17/2024 - 09:40
- DOI:
- 10.21227/e17c-rx87
- License:
48 Views- Categories:
- Keywords:
Abstract
Self-powered photodetectors which can operate without external power sources hold immense promise in future photodetection systems owing to their zero-power features. To achieve high-performance self-powered optoelectronic devices, efficient separation of electron-hole pairs to generate sufficiently high photocurrents is critical, especially in the case of 2D and 3D hybrid devices. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct GNR/Al2O3/IGZO heterostructure for a high-performance photodetector. Due to the built-in electric field in the heterojunctions, this self-powered photodetector exhibits remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34×1010 Jones, and rapid response times of 21/20 ms at zero bias. These results demonstrate promising potential of self-powered photodetectors based on GNR/IGZO p-n heterojunctions for applications in the field of optoelectronic devices.
By analyzing these datasets and applying relevant formulas, we can calculate key performance parameters of the photodetector, such as its detectivity, responsivity, and response time. This process involves detailed data processing and mathematical computations to derive these crucial metrics, which are essential for understanding and evaluating the efficiency and effectiveness of the photodetector in various operational conditions.
