I-V Analysis of photodetector for different wavelength

Citation Author(s):
Tulika
Bajpai
Ajay
Kumar Dwivedi
Rajendra
Kumar Nagaria
Shweta
Tripathi
Submitted by:
Shweta Tripathi
Last updated:
Tue, 02/06/2024 - 01:58
DOI:
10.21227/rp98-pm65
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Abstract 

This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high  responsivity Rs

(A/W)  and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %,  at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias). 

Instructions: 

This file comprise of I-V Curve for different light wavelength (UV-VIS-NIR). 

Comments

I-V Analysis for photodetector

Submitted by Shweta Tripathi on Tue, 02/06/2024 - 02:00

Developed device results in a very high responsivity Rs(A/W) and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %, at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias).

Submitted by Shweta Tripathi on Tue, 02/06/2024 - 02:02

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