Simulation results for paper: Statistical Variability Study of RDF and LER on Nanosheet FETs at Sub 3nm Node

Citation Author(s):
Tongfei
Liu
Submitted by:
Jie Ding
Last updated:
Wed, 02/28/2024 - 22:15
DOI:
10.21227/mgs6-ya17
Data Format:
*.csv (zip); *.xlsx (zip)
License:
Creative Commons Attribution
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Categories:
Other
Standards Research Data
Keywords:
2D dataset
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Abstract 

This dataset is in support of my research paper 'Statistical Variability Study of RDF and LER on Nanosheet FETs at Sub 3nm Node'. In this study, we studied the influence of RDF and LER on NSFETs through NEGF method for simulation. The results are generated by simulation software, Nano-electronic Simulation Software (NESS), which was developed by the University of Glasgow’s Device Modelling Group. Our results predict the figures of merit of nanosheet devices at different channel lengths and widths with the influence of RDF and LER. Therefore, this study gives guidance for the device design and subsequent circuit design.

Instructions: 

 

The dataset files are .xlsx files. The numbers in the file name represent the length, width, and height of the device channel, respectively. The first column of the file is the gate voltage. 

The remaining columns of the file are drain current (unit:μA).

 

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