Shweta Tripathi

This letter reports a Al/WSe2/CuO/ITO structure based broadband photodetector. The low cost spin coating technique is utilized to deposit, p-type WSe2 film and n-type CuO film. The Al contacts were deposited over WSe2 film using thermal evaporation unit. The suggested photodetector gives the broad photo response with maximum  ResponsivityRS(A/W)  and External Quantum Efficiency (EQE) value of 3099 A/W,  3680A/W, and 493A/W; 1.20 × 106%, 1.52× 106% and 2.04 × 105% at 350nm (UV),  500nm (visible) and 950nm (IR) under application of -2V bias.

This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high  responsivity Rs