This letter reports a Al/WSe2/CuO/ITO structure based broadband photodetector. The low cost spin coating technique is utilized to deposit, p-type WSe2 film and n-type CuO film. The Al contacts were deposited over WSe2 film using thermal evaporation unit.
This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high responsivity Rs
(A/W) and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %, at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias).