I-V Analysis of photodetector for different wavelength

Name: I-V Analysis of photodetector for different wavelength
Creator: Shweta Tripathi
License: https://creativecommons.org/licenses/by/4.0/
Keywords: Other

Citation Author(s):: Tulika Bajpai

Ajay Kumar Dwivedi

Rajendra Kumar Nagaria

Shweta Tripathi
Submitted by:: Shweta Tripathi
Last updated:: Tue, 02/06/2024 - 06:58
DOI:: 10.21227/rp98-pm65

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Other

Keywords:

photodetectors

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Abstract

This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high responsivity Rs (A/W) and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %, at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias).

Instructions:

This file comprise of I-V Curve for different light wavelength (UV-VIS-NIR).

I-V Analysis for photodetector

Shweta Tripathi Tue, 02/06/2024 - 07:00 Permalink

Developed device results in a very high responsivity Rs(A/W) and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %, at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias).

Shweta Tripathi Tue, 02/06/2024 - 07:02 Permalink