.doc file
—Indelible challenges facing to control the transistor action and realization of emerging two-dimensional van der Waals multi-layer (2Dml) field-effect transistors (FETs), to post-silicon technology era. For scalability, a cost-effective large area ultrafine thin films interface and band alignment of multi-layer channel material with compatible gate dielectric are essential.
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the dark current curve is used to extract various parameters in a CMOS image sensor
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