nanowire
It is shown that in semiconductor structures with a low quantum dimension, it is possible to obtain the required potential relief for quasiparticles by changing the sizes of the structure elements. By using the example of a resonant-tunneling diode formed from planar nanowires of various cross-sections and lengths, it is demonstrated how such changes affect the potential for electrons and the electrical characteristics of the device. The considered approach is based on the effect of dimensional quantization of the energy of quasiparticles in solids.
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The current state and prospects of development of the component base for ultra-high-speed electronics with low power consumption are considered. Approaches to the design of solid-state electronic devices based on nanowires that can be used in future digital electronics and their constructions are proposed. Estimates of the expected characteristics of these devices are presented.
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