Ultra-High-Speed Low-Power Electronics

Citation Author(s):: I. A.
Obukhov
Submitted by:: Pavel Yermolov
Last updated:: Wed, 04/02/2025 - 11:53
DOI:: 10.21227/43ay-6s44
Data Format:: *.avi; *.jpg; *.csv; *.txt; *.m;*pdf;
Research Article Link:: Ultra-High-Speed Low-Power Electronics
License:: Creative Commons Attribution

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Categories:: Other
Keywords:: nanowire, field effect transistor, relaxation quantum transistor, indium an-timonide (InSb), indium arsenide (InAs), digital electronics, terahertz range

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Abstract

The current state and prospects of development of the component base for ultra-high-speed electronics with low power consumption are considered. Approaches to the design of solid-state electronic devices based on nanowires that can be used in future digital electronics and their constructions are proposed. Estimates of the expected characteristics of these devices are presented.

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