IEEE DataPort will be unavailable from 5:00 PM - 7:00 PM (EDT) for scheduled maintenance. We apologize for the inconvenience.

lateral-double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET)

In current study, a new silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) is offered. Altering charge distribution causes less electric field crowding and enhanced breakdown voltage (VBR). For amending charge distribution, a metal region (COLUMN) and an air layer in the transistor are used.

Categories:
386 Views

In this paper, a novel silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) is presented. Changing charge distribution leads to lower electric field crowding and increased breakdown voltage (VBR). For modifying charge distribution, a metal region (COLUMN) and an air layer inside the transistor are utilized. On the other the floating-body effect and impact ionization generate excess holes that are amplified by the parasitic bipolar junction transistor (BJT) in SOI-LDMOSFET that degrade the transistor performance.

Categories:
178 Views