TiO2-based memristive device Experimental Data
A set of electrical measurements from a TiO2-based memristive device is presented. The data correspond to a resistive switching device, with a Ag/ITO/TiO2/Ag MIM structure. The thickness of TiO2 is 50nm.
The dataset file contains four columns of numerical data, corresponding to time, voltage, current and resistance, of the measured device.
In order to be used, import the data into a analysis software such as Matlab, Python, Maple, or any other of your preference.