TiO2-based memristive device Experimental Data

Name: TiO2-based memristive device Experimental Data
Creator: Jesus Jimenez-Leon
License: https://creativecommons.org/licenses/by/4.0/
Keywords: Other

Citation Author(s):: Jesús Jiménez-León
Submitted by:: Jesus Jimenez-Leon
Last updated:: Wed, 05/18/2022 - 02:18
DOI:: 10.21227/j0k3-qx03
Research Article Link:: A Compact Modeling Methodology for Experimental Memristive Devices

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Categories:

Other

Keywords:

Memristor VI characteristics

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Abstract

A set of electrical measurements from a TiO2-based memristive device is presented. The data correspond to a resistive switching device, with a Ag/ITO/TiO2/Ag MIM structure. The thickness of TiO2 is 50nm.

Instructions:

The dataset file contains four columns of numerical data, corresponding to time, voltage, current and resistance, of the measured device.
In order to be used, import the data into a analysis software such as Matlab, Python, Maple, or any other of your preference.

Required

Nandini Shukla Mon, 04/15/2024 - 16:16 Permalink