A set of electrical measurements from a TiO2-based memristive device is presented. The data correspond to a resistive switching device, with a Ag/ITO/TiO2/Ag MIM structure. The thickness of TiO2 is 50nm.
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A set of electrical measurements from a TiO2-based memristive device is presented. The data correspond to a resistive switching device, with a Ag/ITO/TiO2/Ag MIM structure. The thickness of TiO2 is 50nm.
The Pinched Hysterisis Loop (PHL) i.e VI characteristics of memristor is studied by the application of different windows functions by computation in MATLAB environment. Also the behavior studied with different frequencies.