Oxide Etching in CF4/O2 Plasma Using OES

The SiO2 etching process using CF4/O2 plasma is a critical step in semiconductor manufacturing, where process efficiency and precise control are essential. In this study, optical emission spectroscopy (OES) data was utilized in real-time to analyze the correlation between plasma conditions and the etch rate (ER) during the process. Specifically, the source and bias power were divided into four different conditions to systematically evaluate the changes in plasma characteristics and the etching process. Based on this evaluation, a physical model was developed to predict the etch rate. Additionally, the study assessed the impact of including argon (Ar) emission data on the model's predictive performance, determining whether the inclusion of Ar information could provide meaningful insights for optimizing process conditions. This research offers a foundation for enhancing the efficiency of SiO2 etching processes and optimizing process control, contributing significantly to the advancement of semiconductor manufacturing processes.

Acknowledgements

This research was supported by the MOTIE(Ministry of Trade, Industry & Energy (1415188246) and KSRC(Korea Semiconductor Research Consortium) (20022492) support program for the development of the future semiconductor device