The SiO2 etching process using CF4/O2 plasma is a critical step in semiconductor manufacturing, where process efficiency and precise control are essential. In this study, optical emission spectroscopy (OES) data was utilized in real-time to analyze the correlation between plasma conditions and the etch rate (ER) during the process. Specifically, the source and bias power were divided into four different conditions to systematically evaluate the changes in plasma characteristics and the etching process. Based on this evaluation, a physical model was developed to predict the etch rate.

DOI Link: 
10.21227/5v09-3z34
Read more

Dataset Files

You must be an IEEE Dataport Subscriber to access these files. Subscribe now or login.

[1] Sang Jeen Hong, "Oxide Etching in CF4/O2 Plasma Using OES", IEEE Dataport, 2024. [Online]. Available: http://dx.doi.org/10.21227/5v09-3z34. Accessed: Dec. 30, 2024.
@data{5v09-3z34-24,
doi = {10.21227/5v09-3z34},
url = {http://dx.doi.org/10.21227/5v09-3z34},
author = {Sang Jeen Hong },
publisher = {IEEE Dataport},
title = {Oxide Etching in CF4/O2 Plasma Using OES},
year = {2024} }
TY - DATA
T1 - Oxide Etching in CF4/O2 Plasma Using OES
AU - Sang Jeen Hong
PY - 2024
PB - IEEE Dataport
UR - 10.21227/5v09-3z34
ER -
Sang Jeen Hong. (2024). Oxide Etching in CF4/O2 Plasma Using OES. IEEE Dataport. http://dx.doi.org/10.21227/5v09-3z34
Sang Jeen Hong, 2024. Oxide Etching in CF4/O2 Plasma Using OES. Available at: http://dx.doi.org/10.21227/5v09-3z34.
Sang Jeen Hong. (2024). "Oxide Etching in CF4/O2 Plasma Using OES." Web.
1. Sang Jeen Hong. Oxide Etching in CF4/O2 Plasma Using OES [Internet]. IEEE Dataport; 2024. Available from : http://dx.doi.org/10.21227/5v09-3z34
Sang Jeen Hong. "Oxide Etching in CF4/O2 Plasma Using OES." doi: 10.21227/5v09-3z34