MIS NAND/NOR simulations

MIS NAND/NOR simulations

Citation Author(s):
Shashank Ram
OVS
Submitted by:
Shashank Ram O.V.S
Last updated:
Sat, 11/16/2019 - 10:05
DOI:
10.21227/29pe-ra26
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Abstract: 

Traditional Static Timing Analysis (STA) assumes only single input switches at a time with the side input held at non-controlling value. This introduces unnecessary pessimism or optimism which may cause degradation of performance or chip failure.  Modeling Multi-Input Switching (MIS) requires a good amount of simulations hence we provide a dataset comprising of SPICE simulations done on 2 input NAND and NOR gate. The simulations are done in a Multi-Input Switching Scenario, where both the inputs switch simultaneously simulations using NANGATE FreePDK 15nm library and models on a parasitics extracted netlist.

Instructions: 

This dataset consists of the simulations of 2 input NAND and NOR gates in the Multi-Input Switching (MIS) scenario.

tr1 and tr2 denote the input transitions, D denote the skew/ temporal proximity between the two inputs and C denotes the Capacitive load.

The outputs comprise the gate delay and output transitions for both rise and fall cases. Both MIS and SIS (single input switching) values are provided.

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[1] Shashank Ram OVS, "MIS NAND/NOR simulations", IEEE Dataport, 2019. [Online]. Available: http://dx.doi.org/10.21227/29pe-ra26. Accessed: Mar. 29, 2020.
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doi = {10.21227/29pe-ra26},
url = {http://dx.doi.org/10.21227/29pe-ra26},
author = {Shashank Ram OVS },
publisher = {IEEE Dataport},
title = {MIS NAND/NOR simulations},
year = {2019} }
TY - DATA
T1 - MIS NAND/NOR simulations
AU - Shashank Ram OVS
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Shashank Ram OVS. (2019). MIS NAND/NOR simulations. IEEE Dataport. http://dx.doi.org/10.21227/29pe-ra26
Shashank Ram OVS, 2019. MIS NAND/NOR simulations. Available at: http://dx.doi.org/10.21227/29pe-ra26.
Shashank Ram OVS. (2019). "MIS NAND/NOR simulations." Web.
1. Shashank Ram OVS. MIS NAND/NOR simulations [Internet]. IEEE Dataport; 2019. Available from : http://dx.doi.org/10.21227/29pe-ra26
Shashank Ram OVS. "MIS NAND/NOR simulations." doi: 10.21227/29pe-ra26