InGaN Quantum Well PL emission in Tamm cavity
In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum well (QW) emitting structure with integrated micro-cavity, which can be used for VCSEL applications. The micro-cavity exhibiting Tamm plasmon optical states is formed by porous GaN distributed Bragg reflector (DBR) bottom mirror and top plasmonic silver metal mirror. Results of PL, Fourier imaging spectroscopy and finite-difference time-domain simulations are presented and discussed. An estimated 8.5 times enhancement of QW PL intensity at around 480-500 nm and a red-shift of QW peak emission is attributed to the Tamm plasmon resonance in the cavity at around 514 nm.
Data are two column PL spectra with wavelength in nanometers and intensity for each area.
- as-grown AverageResult2.txt (50.48 kB)
- pAg layer AverageResult3.txt (50.46 kB)
- porous DBR AverageResult4.txt (67.00 kB)
- pAg + porous DBR AverageResult5.txt (51.09 kB)
- expected result AverageResult6.txt (17.51 kB)
- Calculated enhancement Enahncement.txt (34.53 kB)
- FDTD simulation data FIS FDTD Sim Data.txt (911.55 kB)
- FIS measurement data FIS Measurement Data.txt (28.91 kB)
- Data description Data description.txt (3.20 kB)