Silicon nitride has greatly improved the versatility of integrated photonics technologies due to its wide transparency window, compatibility with existing CMOS-foundry infrastruc ture, and its potential for extremely low propagation loss. However, its low refractive index reduces mode confinement, increasing the minimum device footprint of components such as the widely-adopted ring resonator filter, resulting in a height ened need for reduced-bending architecture to maintain high integration density.