Real name:
First Name:
Osman
Last Name:
Ceylan
Affiliation:
Maury Microwave
Job Title:
Senior Applications Enginer
Expertise:
High Power RF Amplifiers, GaN MMICs, High Power Device Characterization and Modeling
External links:
Datasets & Competitions
In this data set, a power transistor’s uncertainty added S-parameters, its estimated S-parameters, uncertainty added S-parameters of a power amplifier circuit, uncertainty added S-parameters of a cascaded amplifier, and amplifier’s design files are presented. Sumitomo’s GaAs-FET FLL57MK is used for the measurements and design. Cadence AWR is used for the power amplifier design. The power amplifier is designed for 2.4 GHz, using S-parameters.
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S-parameter data with uncertainty information are presented in the data set. High power RF transistors are measured with a regular measurement setup, consisting of a VNA, coaxial cables, bias tees, and fixture. Measured transistors are FLL57MK (GaAs-FET), LP601 (LDMOS-FET), CLF1G0060S-10 (GaN-HEMT), T2G6000528-Q3 (GaN-HEMT), CGH40010-F (GaN-HEMT). The data can be used to analyze for uncertainty studies and designing with uncertainty added S-parameters.
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