In this data set, a power transistor’s uncertainty added S-parameters, its estimated S-parameters, uncertainty added S-parameters of a power amplifier circuit, uncertainty added S-parameters of a cascaded amplifier, and amplifier’s design files are presented. Sumitomo’s GaAs-FET FLL57MK is used for the measurements and design. Cadence AWR is used for the power amplifier design. The power amplifier is designed for 2.4 GHz, using S-parameters.
S-parameter data with uncertainty information are presented in the data set. High power RF transistors are measured with a regular measurement setup, consisting of a VNA, coaxial cables, bias tees, and fixture. Measured transistors are FLL57MK (GaAs-FET), LP601 (LDMOS-FET), CLF1G0060S-10 (GaN-HEMT), T2G6000528-Q3 (GaN-HEMT), CGH40010-F (GaN-HEMT). The data can be used to analyze for uncertainty studies and designing with uncertainty added S-parameters.
