Uncertainty Added S-Parameters of High Power RF Transistors
- Citation Author(s):
-
Osman Ceylan
(Maury Microwave)
Tekamul Buber (Maury Microwave)Giampiero Esposito (Maury Microwave Corp.) - Submitted by:
- Osman Ceylan
- Last updated:
- DOI:
- 10.21227/kdse-7k77
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- Research Article Link:
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Abstract
S-parameter data with uncertainty information are presented in the data set. High power RF transistors are measured with a regular measurement setup, consisting of a VNA, coaxial cables, bias tees, and fixture. Measured transistors are FLL57MK (GaAs-FET), LP601 (LDMOS-FET), CLF1G0060S-10 (GaN-HEMT), T2G6000528-Q3 (GaN-HEMT), CGH40010-F (GaN-HEMT). The data can be used to analyze for uncertainty studies and designing with uncertainty added S-parameters.
Instructions:
There are several software tools available to analyze uncertainty added S-parameters. For example, Maury Microwave’s Insight and VNA Tools are useful software tools. Uncertainty added S-parameters can not be used directly for design. Estimated s-parameters (s1p or s2p files) can be extracted and used to design circuit.
