Uncertainty Added S-Parameters of High Power RF Transistors

Citation Author(s):
Osman
Ceylan
Maury Microwave
Tekamul
Buber
Maury Microwave
Giampiero
Esposito
Maury Microwave Corp.
Submitted by:
Osman Ceylan
Last updated:
Sat, 10/08/2022 - 15:36
DOI:
10.21227/kdse-7k77
Data Format:
Link to Paper:
License:
386 Views
Categories:
Keywords:
5
1 rating - Please login to submit your rating.

Abstract 

S-parameter data with uncertainty information are presented in the data set. High power RF transistors are measured with a regular measurement setup, consisting of a VNA, coaxial cables, bias tees, and fixture. Measured transistors are FLL57MK (GaAs-FET), LP601 (LDMOS-FET), CLF1G0060S-10 (GaN-HEMT), T2G6000528-Q3 (GaN-HEMT), CGH40010-F (GaN-HEMT). The data can be used to analyze for uncertainty studies and designing with uncertainty added S-parameters.

Instructions: 

There are several software tools available to analyze uncertainty added S-parameters. For example, Maury Microwave’s Insight and VNA Tools are useful software tools. Uncertainty added S-parameters can not be used directly for design. Estimated s-parameters (s1p or s2p files) can be extracted and used to design circuit.

Dataset Files

LOGIN TO ACCESS DATASET FILES
Open Access dataset files are accessible to all logged in  users. Don't have a login?  Create a free IEEE account.  IEEE Membership is not required.

Documentation

AttachmentSize
File Read Me.pdf110.4 KB