MOSFET modeling

This paper introduces the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Electrical Simulation Dataset, MESD, an extensive collection of I-V and C-V characteristics data simulated across different foundries' Berkeley Short-channel IGFET Models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several technology nodes from 3 to 350 nm.