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Open Access
Bulk Velocity Field Characteristics of GaAs, InP, InAs and GaSb for Several Doping Concentrations at 300K
- Citation Author(s):
- Submitted by:
- Markus Mueller
- Last updated:
- Tue, 05/17/2022 - 22:21
- DOI:
- 10.21227/gzqc-et34
- Data Format:
- Link to Paper:
- License:
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Abstract
These datasets contain bulk BTE simulation results for GaAs, InP, GaSb and InAs as a function of electric field at 300 K.
Instructions:
To read the data we suggest to
1. un-zip the data
2. read it with e.g. the pandas library for Python or any *csv reader
Dataset Files
zipped BTE simulation data bulk_BTE_data.zip (457.44 kB)
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