RF MEMS

This work presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE® ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved due to the elimination of the thick buffer layer typically present in epitaxial GaN technology. Finite element analysis (FEA) is first performed to find the range of frequencies over which the Sezawa mode is supported in the grown structure.