resonant-tunneling diode

It is shown that in semiconductor structures with a low quantum dimension, it is possible to obtain the required potential relief for quasiparticles by changing the sizes of the structure elements. By using the example of a resonant-tunneling diode formed from planar nanowires of various cross-sections and lengths, it is demonstrated how such changes affect the potential for electrons and the electrical characteristics of the device. The considered approach is based on the effect of dimensional quantization of the energy of quasiparticles in solids.