radiation effects
This study investigates the worst-case Single-Event Effect (SEE) response in semiconductor
power devices induced by energetic ions. An existing predictive model is refined and extended to potentially
consider various semiconductor materials, other geometries and technologies. Comprehensive expressions
for predicting critical ion energies that lead to worst-case SEE response in semiconductor power devices are
obtained through computational simulations. A dedicated experiment is conducted to investigate the model
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The vulnerability of prominent silicon-based U-shaped Metal-Oxide-Semiconductor Field
Effect Transistors (UMOSFET) to destructive radiation effects when operating in terrestrial atmospheric
environments is addressed. It is known that secondary particles from nuclear reactions between atmospheric
neutrons and the constituent materials of electronic devices can trigger Single-Event Burnout (SEB)
destructive failure in power MOSFETs. The susceptibility of UMOSFETs to SEBs induced by atmospheric
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The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors.
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