Memristor
Dataset Description
A dataset containing data collected from measuring the drift characteristics titanium dioxide memristors, for a variety of initial states, under zero-bias conditions.
The devices used were TiO2 devices, with Al2O3 interstitials - the same device type as used in [1].
Data Collection
Devices were electroformed using a series of steadily increasing voltage pulses, ranging in magnitude from 3V to 10V with a step of 0.5V. The electroforming pulse widths ranged from 10µs to 100µs.
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Current quantum systems that are based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that can be used to perform biasing of quantum dots inside the cryostat (i.e., in-situ).
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The Pinched Hysterisis Loop (PHL) i.e VI characteristics of memristor is studied by the application of different windows functions by computation in MATLAB environment. Also the behavior studied with different frequencies.
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