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A first principle study of spin tunneling current under field effect in MTJ data
- Citation Author(s):
- Submitted by:
- Manoj Yadav
- Last updated:
- Sat, 03/26/2022 - 12:45
- DOI:
- 10.21227/xj3d-k060
- License:
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Abstract
DFT-NEGF analysis of Fe/MgO/Fe MTJ having gate voltage over insulated barrier region (MgO) is presented. Because of different work functions of gate and barrier materials, transfer of density of states (DOS) in forbidden energy gap of MgO is found above Fermi energy due to Schottky effect. It is reported that diffused DOS allow high tunneling of majority channel current It shows high spin injection efficiency 0.9928, 0.9959 and 0.9871 with Tunnel Magneto Resistance (TMR) ratios 1743.30\%, 1450.06\% and 572.62\% at gate voltages 1V, 2V and 3V, respectively, left and right electrode voltage is 0.5V.
Instructions:
In read me file, step by step process has been provided that how original data has been prepared for Figures of manuscript.
Funding Agency:
he author gratefully acknowledge financial support from Council of Scientific and Industrial Research (CSIR)-Human Resource Development Group (HRDG), New Delhi, India Grant No. 09/1032(0014)2K18 EMR-1.
Documentation
| Attachment | Size |
|---|---|
 Read me file of original raw data.docx | 15.74 KB |
