Extracted Experimental Data of LDMOS Transistors

Citation Author(s):: Ali
Houadef

IGEE
Submitted by:: Ali Houadef
Last updated:: Fri, 03/18/2022 - 11:21
DOI:: 10.21227/eva3-ws91
Data Format:: *.pdf
License:: Creative Commons Attribution

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Categories:: Standards Research Data
Keywords:: LDMOS, RESURF, Trench, Superjunction, review

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Abstract

We collected BV , RON;SP from over 80 publications reported since the year 2000 and classified them according to their - main- topology and process type.

Instructions:

The excel sheet contains reported breakdown voltage, on-state resistance, and figure of merit of peer reviwed LDMOS devices that are based on experimental data only.

the data is used in the review article : A Review of LDMOS Topologies.