Extracted Experimental Data of LDMOS Transistors
We collected BV , RON;SP from over 150 publications reported since the year 2000 and classified them according to their - main- topology and process type.
The excel sheet contains reported breakdown voltage, on-state resistance, and figure of merit of peer reviwed LDMOS devices that are based on experimental data only.
the data is used in the review article : A Review of LDMOS Topologies. (Submitted only by the time of writing this instruction)