Extracted Experimental Data of LDMOS Transistors

Citation Author(s):
Ali
Houadef
IGEE
Submitted by:
Ali HOUADEF
Last updated:
Tue, 01/04/2022 - 08:52
DOI:
10.21227/eva3-ws91
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Abstract 

We collected BV , RON;SP from over 150 publications reported since the year 2000 and classified them according to their - main- topology and process type.

Instructions: 

The excel sheet contains reported breakdown voltage, on-state resistance, and figure of merit of peer reviwed LDMOS devices that are based on experimental data only.

the data is used in the review article : A Review of LDMOS Topologies. (Submitted only by the time of writing this instruction)