We collected BV , RON;SP from over 80 publications reported since the year 2000 and classified them according to their - main- topology and process type.

DOI Link: 
10.21227/eva3-ws91
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[1] Ali Houadef, "Extracted Experimental Data of LDMOS Transistors", IEEE Dataport, 2021. [Online]. Available: http://dx.doi.org/10.21227/eva3-ws91. Accessed: May. 18, 2022.
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doi = {10.21227/eva3-ws91},
url = {http://dx.doi.org/10.21227/eva3-ws91},
author = {Ali Houadef },
publisher = {IEEE Dataport},
title = {Extracted Experimental Data of LDMOS Transistors},
year = {2021} }
TY - DATA
T1 - Extracted Experimental Data of LDMOS Transistors
AU - Ali Houadef
PY - 2021
PB - IEEE Dataport
UR - 10.21227/eva3-ws91
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Ali Houadef. (2021). Extracted Experimental Data of LDMOS Transistors. IEEE Dataport. http://dx.doi.org/10.21227/eva3-ws91
Ali Houadef, 2021. Extracted Experimental Data of LDMOS Transistors. Available at: http://dx.doi.org/10.21227/eva3-ws91.
Ali Houadef. (2021). "Extracted Experimental Data of LDMOS Transistors." Web.
1. Ali Houadef. Extracted Experimental Data of LDMOS Transistors [Internet]. IEEE Dataport; 2021. Available from : http://dx.doi.org/10.21227/eva3-ws91
Ali Houadef. "Extracted Experimental Data of LDMOS Transistors." doi: 10.21227/eva3-ws91