Amorphous InZnO Schottky Diode with Ultrathin Alumina-Modified Barrier

In this work, an ultrathin plasma-enhanced atomic layer deposition (PEALD) alumina (Al2O3) was first introduced between top platinum (Pt) and underneath a-IZO. As consistently verified by experiment and simulation, such interlayer fundamentally eradicate the interface oxygen deficiency and MIGS, contributing to a much higher ΦB and noticeably JR, while the optimized ultrathin thickness readily allow the electron tunneling, resulting in minimal impact on the forward current. The proposed metal-interlayer-semiconductor (MIS) Schottky contact viably accelerates the developing pace of OS-based SBD and related Schottky devices