First Name
Zhiwei
Last Name
Zheng
Dataset Entries from this Author
The interaction between metal and oxide semiconductors (OSs) is critical for advancing OS applications in large-area, flexible, and heterogeneously integrated electronics. Both ohmic and Schottky contacts are essential in these devices. The abundant intrinsic defects in OSs promote ohmic contact formation but adversely affect the Schottky barrier interface, especially in OSs with diverse sub-bandgap states, such as amorphous indium-zinc oxide (a-IZO).
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In this work, an ultrathin plasma-enhanced atomic layer deposition (PEALD) alumina (Al2O3) was first introduced between top platinum (Pt) and underneath a-IZO. As consistently verified by experiment and simulation, such interlayer fundamentally eradicate the interface oxygen deficiency and MIGS, contributing to a much higher ΦB and noticeably JR, while the optimized ultrathin thickness readily allow the electron tunneling, resulting in minimal impact on the forward current.
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