Cryogenic CMOS (cryo-CMOS) circuits are of-
ten hindered by the cryogenic threshold-voltage increase.
To mitigate such an increase, a forward body biasing (FBB)
technique in bulk CMOS is proposed, which can reliably
operate up to the nominal supply without problematic leak-
age currents, thanks to the larger diode turn-on voltage
at cryogenic temperatures. As a result, traditional circuits,
such as pass-gates, can reliably operate down to 4.2 K, and
their performance is augmented, e.g., digital circuits speed-