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Today, the anywhere, anyhow and anytime application scenarios of 5G system force designer to challenge on electromagnetic interference (EMI) requirements. Despite the technological progress, relevant test techniques are necessary to minimize the future communication system EMI risk. In this paper, the EMI characterization from nonlinearity (NLT) of 5G system Gallium Nitride (GaN) power amplifier (PA) is studied. Firstly, the PA NLT is evaluated by 1-dB/3-dB/6-dB compression point and 3rd-order intermodulation distortion (IMD3).
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This paper explores an original research work on multiband metallized-permittivity measurement method for copper-clad substrates based on bandpass (BP) negative group delay (NGD) ring circuit. The multiband permittivity extraction formula from NGD center frequency harmonics is established from S-parameter model. The BP-NGD function specifications of are defined. The BP-NGD ring resonator (RR) proof-of-concept (PoC) consists of linearly coupled loops implemented in microstrip technology.
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