InGaAs/InP Avalanche Photodiode

We report on the fabrication and micro-transfer printing of InGaAs/InP avalanche photodiodes onto silicon substrates. A process flow was developed to suspend the devices using semiconductor tethers. The devices were characterised in linear mode operation both before suspension and after printing. Despite the additional fabrication steps required and the physical nature of the micro-transfer printing process, the electrical characteristics of the devices were preserved and no degradation in the devices’ optical performance was measured.