Bulk Velocity Field Characteristics of GaAs, InP, InAs and GaSb for Several Doping Concentrations at 300K

Citation Author(s):
Markus
Mueller
TU Dresden
Philippe
Dollfus
Université Paris-Saclay
Michael
Schröter
TU Dresden
Submitted by:
Markus Mueller
Last updated:
Tue, 05/17/2022 - 22:21
DOI:
10.21227/gzqc-et34
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Abstract 

These datasets contain bulk BTE simulation results for GaAs, InP, GaSb and InAs as a function of electric field at 300 K.

Instructions: 

To read the data we suggest to

1. un-zip the data

2. read it with e.g. the pandas library for Python or any *csv reader

Dataset Files

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