Bulk Velocity Field Characteristics of GaAs, InP, InAs and GaSb for Several Doping Concentrations at 300K

Citation Author(s):: Markus Mueller (TU Dresden)

Philippe Dollfus (Université Paris-Saclay)

Michael Schröter (TU Dresden)
Submitted by:: Markus Mueller
Last updated:: Wed, 05/18/2022 - 02:21
DOI:: 10.21227/gzqc-et34
Data Format:: *.csv
Research Article Link:: 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

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III-V

These datasets contain bulk BTE simulation results for GaAs, InP, GaSb and InAs as a function of electric field at 300 K.

To read the data we suggest to

1. un-zip the data

2. read it with e.g. the pandas library for Python or any *csv reader

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