TCR

Two-dimensional (2D) materials have layered structure with unique properties. One of the properties of interest is the temperature coefficient of resistance (TCR) which should be large for fast thermal sensors. The TCR is the calculation of the relative change in resistance per degree of temperature change. Taking a step further, tunable TCR is a concept that involves the control of TCR by the gate voltage. Here we have shown that in a field effect transistor device, the 2D semiconductor material WSe2 has a TCR, which can be controlled by varying the applied gate voltage.