silicon nanobelt device

This study reports the properties and the sensing mechanism of Pd nanoparticles (PdNPs) decorated n+/n-/n+ double-junction silicon nanobelt (SNB) device as hydrogen (H2) gas sensor. The SNB devices are prepared via CMOS process. Plasma-enhanced atomic layer deposition (PEALD) is adopted for PdNPs deposition as sensing material on the Al2O3 dielectric of SNB devices. The PdNPs-decorated SNB devices working at room temperature are characterizedat H2 concentration ranging from 10 to 1000 ppm.

This study reports the properties and the sensing mechanism of Pd nanoparticles (PdNPs) decorated n+/n-/n+ double-junction silicon nanobelt (SNB) device as hydrogen (H2) gas sensor. The SNB devices are prepared via CMOS process. Plasma-enhanced atomic layer deposition (PEALD) is adopted for PdNPs deposition as sensing material on the Al2O3 dielectric of SNB devices.PEALD of PdNPs provides high conformity and fine control of the particle size. The PdNPs-decorated SNB devices working at room temperature are characterizedat H2 concentration ranging from 10 to 1000 ppm.

This study reports the properties and the sensing mechanism of Pd nanoparticles (PdNPs) decorated n+/n-/n+ double-junction silicon nanobelt (SNB) device as hydrogen (H2) gas sensor. The SNB devices are prepared via CMOS process. Plasma-enhanced atomic layer deposition (PEALD) is adopted for PdNPs deposition as sensing material on the Al2O3 dielectric of SNB devices.PEALD of PdNPs provides high conformity and fine control of the particle size. The PdNPs-decorated SNB devices working at room temperature are characterizedat H2 concentration ranging from 10 to 1000 ppm.