semiconductor devicemodeling

The paper describes the way of extending a basicdiode SPICE model for a possibility to simulate realistic reverserecovery of power diodes. The proposed macro model uses allbasic diode model characteristics and processes the diffusioncapacitance current for adjusting reverse recovery. A Windowsapplication tool was made to simplify creating a new diode SPICEsub-model using the manufacturer data sheet or measured data.Experimental data are presented for comparison of the proposedmodel and real diode reverse recovery