microwave amplifier

Transistor models are crucial for circuit simulation. Reliable design of high-performance circuits requires that transistor characteristics are adequately represented, which makes accurate and fast models indispensable. Scattering (or S-)parameters are perhaps the most widely used RF characteristics, employed in the design and analysis of linear devices and circuits for calculation of the input and output impedance, isolation, gain, as well as stability, all being important performance figures for small-signal or low-noise amplifiers.

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In this data set, a power transistor’s uncertainty added S-parameters, its estimated S-parameters, uncertainty added S-parameters of a power amplifier circuit, uncertainty added S-parameters of a cascaded amplifier, and amplifier’s design files are presented. Sumitomo’s GaAs-FET FLL57MK is used for the measurements and design. Cadence AWR is used for the power amplifier design. The power amplifier is designed for 2.4 GHz, using S-parameters.

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