MESFET

In this work, physical parameter‐based modeling of small signal parameters for a metal‐semiconductor field‐effect transistor (MESFET) has been carried out as continuous functions of drain voltage, gate voltage, frequency, and gate width. For this purpose, a device simulator has been used to generate a big dataset of which the physical device parameters included material type, doping concentration and profile, contact type, gate length, gate width, and work function.

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