Langmuir probe
Maintaining etch uniformity from the center to the edge of the wafer during the etching process is a critical challenge. In particular, the edge of the wafer poses difficulties due to changes in the angle of ion incidence caused by the curvature of the sheath, making it challenging to achieve the desired etch pattern. Therefore, identifying and monitoring key factors that significantly impact center-to-edge uniformity is essential.
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As semiconductor devices have become increasingly miniaturized, the ability to control very small Critical Dimensions (CDs) during the etching process has become crucial through controlled plasma processes. Hence, diagnosing plasma and reflecting this in the process to enhance yield is of paramount importance. Typically, a Single Langmuir Probe (SLP) is utilized for plasma diagnostics.
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