This document shows time-domain thermoreflectance (TDTR) measurements on blanket phase change multilayers [Fig. S1] and electro-thermal simulations of confined PCM cells [Fig. S2]. The extracted thermal resistance per unit area obtained from our measured TDTR signal ratio vs. time delay in Fig. S1 reveals that Bi2Te3 layer only introduces ~13% additional thermal resistance in the PCM stack. On the other hand, Fig. S2 shows the electro-thermal simulation of confined cells with 4 nm Bi2Te3 and 50 nm GST layer with a BE (TiN) diameter of 150 nm in Fig.

DOI Link: 
10.21227/wq7q-bx17
Read more

Dataset Files

You must be an IEEE Dataport Subscriber to access these files. Subscribe now or login.

[1] Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop, "Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer", IEEE Dataport, 2020. [Online]. Available: http://dx.doi.org/10.21227/wq7q-bx17. Accessed: Jan. 14, 2025.
@data{wq7q-bx17-20,
doi = {10.21227/wq7q-bx17},
url = {http://dx.doi.org/10.21227/wq7q-bx17},
author = {Asir Intisar Khan; Heungdong Kwon; Raisul Islam; Christopher Perez; Michelle Chen; Mehdi Asheghi; Kenneth Goodson; H.-S. Philip Wong; Eric Pop },
publisher = {IEEE Dataport},
title = {Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer},
year = {2020} }
TY - DATA
T1 - Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer
AU - Asir Intisar Khan; Heungdong Kwon; Raisul Islam; Christopher Perez; Michelle Chen; Mehdi Asheghi; Kenneth Goodson; H.-S. Philip Wong; Eric Pop
PY - 2020
PB - IEEE Dataport
UR - 10.21227/wq7q-bx17
ER -
Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop. (2020). Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer. IEEE Dataport. http://dx.doi.org/10.21227/wq7q-bx17
Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop, 2020. Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer. Available at: http://dx.doi.org/10.21227/wq7q-bx17.
Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop. (2020). "Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer." Web.
1. Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop. Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer [Internet]. IEEE Dataport; 2020. Available from : http://dx.doi.org/10.21227/wq7q-bx17
Asir Intisar Khan, Heungdong Kwon, Raisul Islam, Christopher Perez, Michelle Chen, Mehdi Asheghi, Kenneth Goodson, H.-S. Philip Wong, Eric Pop. "Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer." doi: 10.21227/wq7q-bx17